A study of microwave feedback amplifiers : GaAs MESFETS vs. bipolar transistors

Includes bibliographical references (page 68)This thesis examines the realization of a microwave feedback\ud amplifier (FBA) using two different semiconductor devices: the gallium\ud arsenide metal-semiconductor field-effect transistor (GaAs FET) and the\ud silicon bipolar junction transistor (BJT).\ud A set of specifications was chosen for the GaAs FET FBA, and a design\ud procedure was established. The same procedure was then applied to the\ud BJT FBA, with the same set of specifications as a goal. Modules employing\ud each type of device were constructed, and the electrical performance was\ud measured in the laboratory. Measured data was then compared to\ud computed data.\ud Finally, conclusions were arrived at that convincingly demonstrate\ud that the GaAs FET is clearly the superior device for the chosen set of\ud specifications, and any FBA application above 2 GHz or so generally favors\ud the GaAs FET