Add to ORKGIncludes bibliographical references (pages 48-55)The phenomena of DIBL (Drain Induced Barrier Lowering) effect on the short channel Gallium Arsenide (GaAs) MESFET???s has been developed based on one dimensional Poisson???s equation. An analytical model for the exact threshold voltage shift effect on the non-linear short channel Gallium Arsenide (GaAs) MESFET is showcased. An effect of short channel device to the threshold voltage, drain-source applied voltage VDS, ratio of Channel length and the channel depth (L/a), and Channel doping carrier Concentration ND has been incorporated in the present model. The model shows that threshold voltage and channel doping concentration ND are key parameters and justify a fair basis to the short channel ...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
level trap effects has been developed, which is far more accurate than previous equivalent circuit m...
Abstract — This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSF...
Abstract:- An analytical study of drain induced barrier-lowering coefficient in short channel MOSFET...
We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). Th...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect tr...
Abstract-An engineering model for short-channel MOS devices which includes the effect of carrier dri...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). Th...
This paper presents an analytical investigation of the drain current model for symmetric short chann...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
level trap effects has been developed, which is far more accurate than previous equivalent circuit m...
Abstract — This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSF...
Abstract:- An analytical study of drain induced barrier-lowering coefficient in short channel MOSFET...
We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). Th...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involve...
An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect tr...
Abstract-An engineering model for short-channel MOS devices which includes the effect of carrier dri...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
In this dissertation, an above-threshold I-V model framework is constructed for short-channel double...
We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). Th...
This paper presents an analytical investigation of the drain current model for symmetric short chann...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
level trap effects has been developed, which is far more accurate than previous equivalent circuit m...
Abstract — This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSF...