Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications

Includes bibliographical references (leaves 42-48)In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both of the gate-source capacitances, gate-drain capacitances and switching speed under dark and illumination conditions. Different fabrication parameters such as ion dose, ion energy and ion range parameters, channel length and active channel depth has been incorporated in the model to understand the better effect of device performance at the dark intensity and illumination conditions. The switching speed of the device has been studied by changing the active channel depth, gate length and other electrical and fabrications parameters influenced by the dark and illumination conditions