Scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) have been used to image surfaces of GaN grown by molecular beam epitaxy. Detailed analysis of the same area using both techniques allowed imaging and comparison of both surface potential variations arising from the presence of negatively charged threading dislocations and localized current leakage paths associated with dislocations. Correlations between the charge state of dislocations, conductivity of current leakage paths, and dislocation type were thereby established. Analysis of correlated SKPM and C-AFM images revealed a density of negatively charged features of similar to3 x 10(8) cm(-2) and a localized current leakage path density of similar to3 x ...
MOCVD grown Al1-xInxN/AlN/GaN and InxGa1-xN/GaN heterostructures have been characterized by Atomic F...
Local high current densities in areas around dislocations with a screw component might be responsibl...
Research on III-nitride semiconductors is achieving new heights due their high potential application...
Electrical and structural properties of extended defects including threading dislocations/V-defects ...
Electrical and structural properties of extended defects including threading dislocations/V-defects ...
Energy-efficient power devices benefit from GaN’s superior intrinsic properties, such as wide band ...
Dislocation-related conduction paths in n-type GaN grown by molecular-beam epitaxy and a mechanism f...
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact a...
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact a...
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact a...
We investigated the type, spatial distribution, line direction, and electronic properties of disloca...
This thesis uses the techniques of atomic force microscopy (AFM) and conductiveAFM (CAFM) to study d...
none6noMOCVD grown Al1-xInxN/AlN/GaN and InxGa1-xN/GaN heterostructures have been characterized by A...
Conductive atomic force microscopy has been used to investigate the local conductivity in hydride va...
A measurement technique combining Kelvin-probe force microscopy with substrate bias is developed and...
MOCVD grown Al1-xInxN/AlN/GaN and InxGa1-xN/GaN heterostructures have been characterized by Atomic F...
Local high current densities in areas around dislocations with a screw component might be responsibl...
Research on III-nitride semiconductors is achieving new heights due their high potential application...
Electrical and structural properties of extended defects including threading dislocations/V-defects ...
Electrical and structural properties of extended defects including threading dislocations/V-defects ...
Energy-efficient power devices benefit from GaN’s superior intrinsic properties, such as wide band ...
Dislocation-related conduction paths in n-type GaN grown by molecular-beam epitaxy and a mechanism f...
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact a...
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact a...
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy (AFM) in semi-contact a...
We investigated the type, spatial distribution, line direction, and electronic properties of disloca...
This thesis uses the techniques of atomic force microscopy (AFM) and conductiveAFM (CAFM) to study d...
none6noMOCVD grown Al1-xInxN/AlN/GaN and InxGa1-xN/GaN heterostructures have been characterized by A...
Conductive atomic force microscopy has been used to investigate the local conductivity in hydride va...
A measurement technique combining Kelvin-probe force microscopy with substrate bias is developed and...
MOCVD grown Al1-xInxN/AlN/GaN and InxGa1-xN/GaN heterostructures have been characterized by Atomic F...
Local high current densities in areas around dislocations with a screw component might be responsibl...
Research on III-nitride semiconductors is achieving new heights due their high potential application...