A recombination-controlled tunneling model is used to explain the strong frequency dispersion seenin the accumulation capacitance and conductance of dielectric/n-In0.53Ga0.47As metal-oxidesemiconductorcapacitors. In this model, the parallel conductance is large when, at positive gatebiases, the metal Fermi level lines up with a large density of interface states in the In0.53Ga0.47Asband gap. It is shown that the model explains in a semi-quantitative manner the experimentallyobserved capacitor characteristics, including a peak in parallel conductance/frequency (Gp=x) versuslog frequency curves at positive gate bias and the dependence of the frequency dispersion on thedielectric thickness
This work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is ...
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–...
In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often obser...
This paper presents a detailed investigation of the temperature dependence of frequency dispersion o...
In this work, we have systematically studied the frequency dispersion of the capacitance-voltage (C-...
Abstract — By in-depth analysis of the electrical response of border traps in gate oxide, a new bord...
Methods to extract trap densities at high-permittivity k dielectric/III-V semiconductor interfaces a...
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage cu...
The authors model the capacitance-voltage (CV) behavior of In0.53Ga0.47As metal-oxide-semiconductor ...
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a g...
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a ...
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a ...
The authors apply the conductance method at 25 and 150 °C to GaAs–Al₂O₃ metal-oxide-semiconductor de...
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–...
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–...
This work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is ...
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–...
In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often obser...
This paper presents a detailed investigation of the temperature dependence of frequency dispersion o...
In this work, we have systematically studied the frequency dispersion of the capacitance-voltage (C-...
Abstract — By in-depth analysis of the electrical response of border traps in gate oxide, a new bord...
Methods to extract trap densities at high-permittivity k dielectric/III-V semiconductor interfaces a...
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage cu...
The authors model the capacitance-voltage (CV) behavior of In0.53Ga0.47As metal-oxide-semiconductor ...
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a g...
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a ...
In this work, we describe how the frequency dependence of conductance (G) and capacitance (C) of a ...
The authors apply the conductance method at 25 and 150 °C to GaAs–Al₂O₃ metal-oxide-semiconductor de...
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–...
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–...
This work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is ...
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–...
In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often obser...
.jpg%3Fwidth%3D300&w=3840&q=75)
Add to ORKG