Add to ORKGThe operation of the voltage-mode and current-mode sense amplifiers (VSA and CSA) is explained in detail. Analytical expressions for offset arising from random FET mismatch are derived. The mechanism of two offset reduction method for VSA is explained. The supply-dependent offset for CSA is shown. The offset combined with signal attenuation define a figure-of-merit. The current-mode sense amplifier is shown to be superior at VDD < 0.6 ~ 0.7V
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
With the downscaling in device sizes, process-induced parameter variation has emerged as one of the ...
[[abstract]]A conventional latch-type sense amplifier in a static random access memory (SRAM) could ...
Abstract — The sense amplifiers is a main peripheral of CMOS memory and play an important role to ov...
Static Random Access Memory (SRAM) have been used extensively in the market especially in product su...
The design of a new bit-line sensing scheme of SRAM memories is presented, which combines offset can...
A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It introduc...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
A systematic offset voltage occurs in sense amplifiers for SRAMs, mainly due to the mismatch between...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
A full current-mode sense amplifier is presented. It extensively utilizes the cross-c...
Abstract-This paper derives a new formula for the sensitivity of a vertically matched CMOS sense amp...
International audienceConventionally, the access failures in SRAMs are treated at core cell level by...
[[abstract]]Transistor sizing of a latched sense amplifier is shown to be able to trade sensitivity ...
[[abstract]]The voltage difference on bit line pairs is a critical parameter while designing static ...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
With the downscaling in device sizes, process-induced parameter variation has emerged as one of the ...
[[abstract]]A conventional latch-type sense amplifier in a static random access memory (SRAM) could ...
Abstract — The sense amplifiers is a main peripheral of CMOS memory and play an important role to ov...
Static Random Access Memory (SRAM) have been used extensively in the market especially in product su...
The design of a new bit-line sensing scheme of SRAM memories is presented, which combines offset can...
A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It introduc...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
A systematic offset voltage occurs in sense amplifiers for SRAMs, mainly due to the mismatch between...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
A full current-mode sense amplifier is presented. It extensively utilizes the cross-c...
Abstract-This paper derives a new formula for the sensitivity of a vertically matched CMOS sense amp...
International audienceConventionally, the access failures in SRAMs are treated at core cell level by...
[[abstract]]Transistor sizing of a latched sense amplifier is shown to be able to trade sensitivity ...
[[abstract]]The voltage difference on bit line pairs is a critical parameter while designing static ...
Sense amplifiers are important circuit components of a dynamic random access memory (DRAM), which fo...
With the downscaling in device sizes, process-induced parameter variation has emerged as one of the ...
[[abstract]]A conventional latch-type sense amplifier in a static random access memory (SRAM) could ...