High Power Direct-Contact RF Laminate Microswitch

Silicon based Microelectromechanical systems (MEMS) technology has produced radio-frequency (RF) micro switches for the past two decades and exhibit low loss, high linearity and low power consumption compared with conventional solid state switch. However, it has been challenged beyond 10 watts since its limited power handling capability.We have introduced Laminate technology to overcome limited power handling capability in conventional RF MEMS switch. It made possible large actuation stroke, strong force to actuate movable part, more robust conductor lines and less lossy substrate. The microswitch reported here is how to design high power RF laminate switch, addressing design trade-off; how mechanical, RF performance and switching performance are correlated and how power handling capability changes by design.The main device failure mechanisms in high power application are self-actuation due to high incident power and high temperature in device. We have guided how to minimize self-actuation problem and reduce heat source which cause increasing device temperature. Latching system, switch stays switched state without having operation signal, is also a part of this switch. In hence power consumption is zero when switch is switched.The switch showed low contact resistance, 0.3 ohm and decent RF performance, -0.35 dB insertion loss and -18 dB isolation at 9 GHz for low power testing. This switch showed successfully switching at high power testing, 15 Watts at 1.9 GHz and it is expected successful switching higher power 25 Watts at 1.9 GHz by simulation and calculation. Current high power testing was done at 15 Watts, 1.9 GHz due to limited lab equipment