A Multi-Time Programmable Memory Technology in a Native 14nm FINFET Process using Charge Trap Transistors (CTTs)

Described is a Multi-Time Programmable Memory (MTPM) solution, manufactured in a 14 nm bulk FINFET technology, which requires no process adders or additional masks, using Charge Trap Transistors (CTTs). Outlined are the technological breakthroughs required to support multi-time program and erase of CTTs for this secure embedded non-volatile memory (eNVM) technology. For the first time, hardware results demonstrate an endurance of > 103 Program/Erase cycles. Data retention lifetime of > 10 years at 125 °C and scalability to 7 nm has been confirmed