Add to ORKGAggressive scaling of Silicon-based MOSFETs in the past decades have contributed immensely to the performance increase of modern electronics. However, at extreme scaling nodes, what was a solution is now the problem when power dissipation in its static and dynamic form have magnified and already reached the cooling limits. The static power dissipation is related to the short channel effect and can be limited by using other material systems that is immune to the short channel effect such as, two-dimensional semiconductors. The dynamic power dissipation can be reduced by allowing the frequency to increase without costing power dissipation. This can be possible if the device is not designed on a thermionic injection which is limited by the sub...
The energy bandgap is an intrinsic character of semiconductors, which largely determines their prope...
Scaling of metal-oxide-semiconductor field-effect transistors (MOSFET) is hitting fundamental limits...
The effect of thickness, temperature, and source drain bias voltage, V-DS, on the subthreshold slope...
Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low...
Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over...
The continuous improvement of modern electronics has been sustained by the scaling of silicon based ...
University of Minnesota Ph.D. dissertation. June 2017. Major: Electrical Engineering. Advisor: Steve...
As the physical dimensions of the MOSFET have been scaling, the supply voltage has not scaled accord...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
As the conventional metal oxide semiconductor field-effect transistor (MOSFET) keep scaling down to ...
Power consumption has been among the most important challenges for electronics industry and transist...
This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with ch...
International audienceBlack phosphorus (BP) has recently emerged as a promising two-dimensional dire...
The energy bandgap is an intrinsic character of semiconductors, which largely determines their prope...
Scaling of nanoelectronics consequently comes along with power consumption in integrated circuits, e...
The energy bandgap is an intrinsic character of semiconductors, which largely determines their prope...
Scaling of metal-oxide-semiconductor field-effect transistors (MOSFET) is hitting fundamental limits...
The effect of thickness, temperature, and source drain bias voltage, V-DS, on the subthreshold slope...
Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising candidates for low...
Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over...
The continuous improvement of modern electronics has been sustained by the scaling of silicon based ...
University of Minnesota Ph.D. dissertation. June 2017. Major: Electrical Engineering. Advisor: Steve...
As the physical dimensions of the MOSFET have been scaling, the supply voltage has not scaled accord...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
As the conventional metal oxide semiconductor field-effect transistor (MOSFET) keep scaling down to ...
Power consumption has been among the most important challenges for electronics industry and transist...
This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with ch...
International audienceBlack phosphorus (BP) has recently emerged as a promising two-dimensional dire...
The energy bandgap is an intrinsic character of semiconductors, which largely determines their prope...
Scaling of nanoelectronics consequently comes along with power consumption in integrated circuits, e...
The energy bandgap is an intrinsic character of semiconductors, which largely determines their prope...
Scaling of metal-oxide-semiconductor field-effect transistors (MOSFET) is hitting fundamental limits...
The effect of thickness, temperature, and source drain bias voltage, V-DS, on the subthreshold slope...