While need for embedded non-volatile memory (eNVM) in modern computing systems continues to grow rapidly, the options have been limited due to integration and scaling challenges as well as operational voltage incompatibilities. Introduced in this work is a unique multi-time programmable memory (MTPM) solution for advanced high-k/metal-gate (HKMG) CMOS technologies which turns as-fabricated standard logic transistors into eNVM elements, without the need for any process adders or additional masks. These logic transistors, when employed as eNVM elements, are dubbed “Charge Trap Transistors” (CTTs). The fundamental device physics, principles of operation, and technological breakthroughs required for employing logic transistors as eNVM are prese...
One time programmable memory (OTP) is one type of nonvolatile memory (NVM). The most attractive feat...
We present an organic charge trapping memory transistor with lithographically defined bottom source ...
Charge-trapping devices using multilayered dielectrics were studied for nonvolatile memory applicati...
While need for embedded non-volatile memory (eNVM) in modern computing systems continues to grow rap...
The availability of on-chip non-volatile memory for advanced high-k-metal-gate CMOS technology nodes...
Described is a secure, multi-time programmable memory (MTPM) solution for the 14 nm FINFET node and ...
Described is a Multi-Time Programmable Memory (MTPM) solution, manufactured in a 14 nm bulk FINFET t...
The Charge Trap Transistor (CTT) technology is an emerging memory solution that turns as-fabricated ...
In this article, we characterized the charge trapping and detrapping behaviors of charge-trap transi...
This dissertation presents the first on-chip demonstration of a Multiply-and-Accumulate (MAC) functi...
Charge-trap transistor (CTT) is a novel non-volatile memory (NVM) technology suitable for both digit...
Novel memory devices are essential for developing low power, fast, and accurate in-memory computing ...
As the demand for energy-efficient cognitive computing keeps increasing, the conventional von Neuman...
textNovel logic and memory device concepts are proposed and analyzed. For the latter purpose the co...
[[abstract]]In this work, we describe a novel technique of fabricating germanium nanocrystal quasi-n...
One time programmable memory (OTP) is one type of nonvolatile memory (NVM). The most attractive feat...
We present an organic charge trapping memory transistor with lithographically defined bottom source ...
Charge-trapping devices using multilayered dielectrics were studied for nonvolatile memory applicati...
While need for embedded non-volatile memory (eNVM) in modern computing systems continues to grow rap...
The availability of on-chip non-volatile memory for advanced high-k-metal-gate CMOS technology nodes...
Described is a secure, multi-time programmable memory (MTPM) solution for the 14 nm FINFET node and ...
Described is a Multi-Time Programmable Memory (MTPM) solution, manufactured in a 14 nm bulk FINFET t...
The Charge Trap Transistor (CTT) technology is an emerging memory solution that turns as-fabricated ...
In this article, we characterized the charge trapping and detrapping behaviors of charge-trap transi...
This dissertation presents the first on-chip demonstration of a Multiply-and-Accumulate (MAC) functi...
Charge-trap transistor (CTT) is a novel non-volatile memory (NVM) technology suitable for both digit...
Novel memory devices are essential for developing low power, fast, and accurate in-memory computing ...
As the demand for energy-efficient cognitive computing keeps increasing, the conventional von Neuman...
textNovel logic and memory device concepts are proposed and analyzed. For the latter purpose the co...
[[abstract]]In this work, we describe a novel technique of fabricating germanium nanocrystal quasi-n...
One time programmable memory (OTP) is one type of nonvolatile memory (NVM). The most attractive feat...
We present an organic charge trapping memory transistor with lithographically defined bottom source ...
Charge-trapping devices using multilayered dielectrics were studied for nonvolatile memory applicati...