Indium Antimonide (InSb) nanowires with a diameter ranging from 30 nm to 200 nm, were synthesized by electrochemical disposition in anodized alumina and polycarbonate porous membranes. In addition, epitaxial single crystalline InSb nanowires with diameters ranging from 5 nm to 100 nm, were synthesized by chemical vapor deposition (CVD) using Au nanoparticles as catalyst. Structural and material characterization of InSb nanowires was carried out by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and transmission electron microscopy (TEM). Electrical characterization of InSb nanowires was conducted by fabricating nanowire field effect transistors (FETs) by electron-beam lithography and ...
The authors present fabrication and electrical measurements of InSb nanowire field-effect transistor...
The goal of this project was to deliver functional nanowire FETs made with Indium Antimonide nanowir...
We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth tem...
Bulk indium antimonide (InSb) is an III-V semiconductor compound that is widely used to detect infra...
In this chapter, a photodetector using a single indium antimonide (InSb) nanowire is shown to effect...
In the recent past, there has been an increasing interest in nanostructured III-V semiconductor mate...
We report the first large-scale synthesis of single crystal InSb nanowires using self-catalyzed vapo...
Semiconductor InSb nanowire have been synthesized by the typical three-electrode electrochemical cel...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Indium antimonide (InSb) is a III–V compound semiconductor that in a form of nanowires can possess i...
InSb nanowire arrays have been fabricated by direct current electrodeposition inside the nanochan-ne...
Indium antimonide (InSb) is a promising semiconducting material that has been implemented in various...
The authors present fabrication and electrical measurements of InSb nanowire field-effect transistor...
The authors present fabrication and electrical measurements of InSb nanowire field-effect transistor...
The goal of this project was to deliver functional nanowire FETs made with Indium Antimonide nanowir...
We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth tem...
Bulk indium antimonide (InSb) is an III-V semiconductor compound that is widely used to detect infra...
In this chapter, a photodetector using a single indium antimonide (InSb) nanowire is shown to effect...
In the recent past, there has been an increasing interest in nanostructured III-V semiconductor mate...
We report the first large-scale synthesis of single crystal InSb nanowires using self-catalyzed vapo...
Semiconductor InSb nanowire have been synthesized by the typical three-electrode electrochemical cel...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Indium antimonide (InSb) is a III–V compound semiconductor that in a form of nanowires can possess i...
InSb nanowire arrays have been fabricated by direct current electrodeposition inside the nanochan-ne...
Indium antimonide (InSb) is a promising semiconducting material that has been implemented in various...
The authors present fabrication and electrical measurements of InSb nanowire field-effect transistor...
The authors present fabrication and electrical measurements of InSb nanowire field-effect transistor...
The goal of this project was to deliver functional nanowire FETs made with Indium Antimonide nanowir...
We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in...