Continued increase in the process variability is perceived to be a major roadblock for future technology scaling. Its impact is particularly pronounced in large memory arrays due to both the utilization of minimum sized transistors and their extremely large data capacity. In order to enable the continued scaling of the next-generation embedded SRAM, the ability to monitor and characterize, on-chip, the variations in SRAM functionality and performance becomes critical for both gaining a deeper understanding of the sources of variability and for developing more robust circuits and topologies. This work presents a methodology to characterize, directly, the impact of process variability on the functionality of large SRAM-based cache memories - ...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
Technology scaling has been the most obvious choice of designers and chip manufacturing companies to...
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functional...
Robust SRAM design is one of the key challenges of process technology scaling. The steady pace of pr...
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nano...
Aggressive technology scaling to 14 nm technology node increases variability in transistors performa...
none3noWhile traditional scaling used to be accompanied by an improvement in device performance, thi...
Abstract—Evaluation results about area scaling capa-bilities of various SRAM margin-assist technique...
As CMOS technology continuously scales, the process variability becomes a major challenge in designi...
Design variability due to inter-die (D2D) and intra-die (WID) process variations has the potential t...
Several emerging devices have been proposed to continue the CMOS scaling. To assess scalability, dev...
Conventional Static Random Access Memory (SRAM) cells suffer from an intrinsic data instability prob...
We explore the 6T and 8T SRAM design spaces through read static noise margin (RSNM), word-line write...
The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter f...
This thesis explores means of mitigating the effects of silicon variation on SRAM by means of circui...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
Technology scaling has been the most obvious choice of designers and chip manufacturing companies to...
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functional...
Robust SRAM design is one of the key challenges of process technology scaling. The steady pace of pr...
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nano...
Aggressive technology scaling to 14 nm technology node increases variability in transistors performa...
none3noWhile traditional scaling used to be accompanied by an improvement in device performance, thi...
Abstract—Evaluation results about area scaling capa-bilities of various SRAM margin-assist technique...
As CMOS technology continuously scales, the process variability becomes a major challenge in designi...
Design variability due to inter-die (D2D) and intra-die (WID) process variations has the potential t...
Several emerging devices have been proposed to continue the CMOS scaling. To assess scalability, dev...
Conventional Static Random Access Memory (SRAM) cells suffer from an intrinsic data instability prob...
We explore the 6T and 8T SRAM design spaces through read static noise margin (RSNM), word-line write...
The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter f...
This thesis explores means of mitigating the effects of silicon variation on SRAM by means of circui...
Process parameter variations are expected to be significantly high in a sub-50-nm technology regime,...
Technology scaling has been the most obvious choice of designers and chip manufacturing companies to...
The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functional...