The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ-X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film
The magnetic level of the Meissner state in high-Tc oxide thin films is investigated using scanning ...
NiO thin films have been prepared under UHV conditions by metal evaporation on both ex-situ and in-s...
The normal-state resistivity of thin films of the infinite-layer electron-doped cuprate Sr (1-x) La ...
The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a ...
The effects on the X-ray photoelectron diffraction intensities from the substrate produced by epitax...
Ultrathin NiO films in the thickness range between 1 and 27 nm have been deposited on high-quality q...
Low energy electron microscopy (LEEM) is used to study the quantum size effect (QSE) in electron ref...
For well-ordered ultrathin films of NiO(001) on Ag(001), a series of unoccupied states below the vac...
Spin selectivity in angle-resolved Auger photoelectron coincidence spectroscopy (AR-APECS) is used t...
We study theoretically the spin reorientation transition in thin epitaxial films of NiO grown on Ag ...
We report experimental evidence for a transition in the interface coupling between an antiferromagne...
""Spin selectivity in angle-resolved Auger photoelectron coincidence spectroscopy (AR-APECS) is used...
International audienceThe electronic structure around the Fermi energy of a thin film of iron monoxi...
We show that linear polarized x-ray-absorption spectroscopy can be used to measure the temperature a...
Thin metal films have been studied for decades and are widely employed in a myriad of applications. ...
The magnetic level of the Meissner state in high-Tc oxide thin films is investigated using scanning ...
NiO thin films have been prepared under UHV conditions by metal evaporation on both ex-situ and in-s...
The normal-state resistivity of thin films of the infinite-layer electron-doped cuprate Sr (1-x) La ...
The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a ...
The effects on the X-ray photoelectron diffraction intensities from the substrate produced by epitax...
Ultrathin NiO films in the thickness range between 1 and 27 nm have been deposited on high-quality q...
Low energy electron microscopy (LEEM) is used to study the quantum size effect (QSE) in electron ref...
For well-ordered ultrathin films of NiO(001) on Ag(001), a series of unoccupied states below the vac...
Spin selectivity in angle-resolved Auger photoelectron coincidence spectroscopy (AR-APECS) is used t...
We study theoretically the spin reorientation transition in thin epitaxial films of NiO grown on Ag ...
We report experimental evidence for a transition in the interface coupling between an antiferromagne...
""Spin selectivity in angle-resolved Auger photoelectron coincidence spectroscopy (AR-APECS) is used...
International audienceThe electronic structure around the Fermi energy of a thin film of iron monoxi...
We show that linear polarized x-ray-absorption spectroscopy can be used to measure the temperature a...
Thin metal films have been studied for decades and are widely employed in a myriad of applications. ...
The magnetic level of the Meissner state in high-Tc oxide thin films is investigated using scanning ...
NiO thin films have been prepared under UHV conditions by metal evaporation on both ex-situ and in-s...
The normal-state resistivity of thin films of the infinite-layer electron-doped cuprate Sr (1-x) La ...