Ferromagnetic insulators are required for many new magnetic devices, such as dissipationless quantum-spintronic devices, magnetic tunneling junctions, etc. Ferromagnetic insulators with a high Curie temperature and a high-symmetry structure are critical integration with common single-crystalline oxide films or substrates. So far, the commonly used ferromagnetic insulators mostly possess low-symmetry structures associated with a poor growth quality and widespread properties. The few known high-symmetry materials either have extremely low Curie temperatures (≤16 K), or require chemical doping of an otherwise antiferromagnetic matrix. Here we present compelling evidence that the LaCoO3 single-crystalline thin film under tensile strain is a rar...
We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering c...
Materials with temperature-dependent metal-to-insulator transitions (MIT) have gained attention for ...
It has been well established that both in bulk at ambient pressure and for films under modest strain...
It is well known that the epitaxial strain plays a vital role in tuning the magnetic states in trans...
Transition metal oxides are promising candidates for the next generation of spintronic devices due t...
LaCoO3 (LCO) has attracted much attention due to the unique magnetic transition and spin transition ...
The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusi...
With local density approximation + Hubbard $U$ (LDA+$U$) calculations, we show that the ferromagneti...
The electronic structure of epitaxial films on LaCoO3 (LCO) has been studied within first-principles...
This paper shows that the oxygen vacancies observed experimentally in thin films of LaCoO3 subject t...
The magnetic properties of perovskite oxides can be affected by various conditions such as doping co...
Epitaxial strain imposed in complex oxide thin films by heteroepitaxy is recognized as a powerful to...
Neutron scattering and magnetometry measurements have been used to study phase transitions in LaCoO3...
Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossove...
The effects of synthesis method, Sr-doping, and Co3O4 on the rare-earth perovskite LaCoO3 were exami...
We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering c...
Materials with temperature-dependent metal-to-insulator transitions (MIT) have gained attention for ...
It has been well established that both in bulk at ambient pressure and for films under modest strain...
It is well known that the epitaxial strain plays a vital role in tuning the magnetic states in trans...
Transition metal oxides are promising candidates for the next generation of spintronic devices due t...
LaCoO3 (LCO) has attracted much attention due to the unique magnetic transition and spin transition ...
The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusi...
With local density approximation + Hubbard $U$ (LDA+$U$) calculations, we show that the ferromagneti...
The electronic structure of epitaxial films on LaCoO3 (LCO) has been studied within first-principles...
This paper shows that the oxygen vacancies observed experimentally in thin films of LaCoO3 subject t...
The magnetic properties of perovskite oxides can be affected by various conditions such as doping co...
Epitaxial strain imposed in complex oxide thin films by heteroepitaxy is recognized as a powerful to...
Neutron scattering and magnetometry measurements have been used to study phase transitions in LaCoO3...
Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossove...
The effects of synthesis method, Sr-doping, and Co3O4 on the rare-earth perovskite LaCoO3 were exami...
We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering c...
Materials with temperature-dependent metal-to-insulator transitions (MIT) have gained attention for ...
It has been well established that both in bulk at ambient pressure and for films under modest strain...