Add to ORKGThis write-up describes an efficient numerical method for the Monte Carlo calculation of the spectral density of current in the multi-junction single-electron devices and hopping structures. In future we plan to expand this write-up into a full-size paper
A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on t...
In this work, we extend an already existing simulator for tunnel FETs to fully take into account non...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
This write-up describes an efficient numerical method for the Monte Carlo calculation of the spectra...
In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the...
We describe a new and efficient method for numerical study of the dynamics and statistics of single-...
In the present paper, we report a procedure to calculate tunnel currents as a function of the applie...
A new approach for estimating small quantum tunneling rates by Monte Carlo calculation is proposed a...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
none8siIn this work, we extend an already existing simulator for tunnel FETs to fully take into acco...
Abstract.- We consider a tunnel junction between two arbitrary non-linear systems in any dimension, ...
An a priori computational method for determining intensities in inelastic electron tunneling spectro...
We introduce a scheme to obtain the deconvolved density of states (DOS) of the tip and sample, from ...
Continual technology innovations make it possible to fabricate electronic devices on the order of 10...
In this thesis a theoretical study is made of the behaviour of single- electronic devices and system...
A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on t...
In this work, we extend an already existing simulator for tunnel FETs to fully take into account non...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
This write-up describes an efficient numerical method for the Monte Carlo calculation of the spectra...
In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the...
We describe a new and efficient method for numerical study of the dynamics and statistics of single-...
In the present paper, we report a procedure to calculate tunnel currents as a function of the applie...
A new approach for estimating small quantum tunneling rates by Monte Carlo calculation is proposed a...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
none8siIn this work, we extend an already existing simulator for tunnel FETs to fully take into acco...
Abstract.- We consider a tunnel junction between two arbitrary non-linear systems in any dimension, ...
An a priori computational method for determining intensities in inelastic electron tunneling spectro...
We introduce a scheme to obtain the deconvolved density of states (DOS) of the tip and sample, from ...
Continual technology innovations make it possible to fabricate electronic devices on the order of 10...
In this thesis a theoretical study is made of the behaviour of single- electronic devices and system...
A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on t...
In this work, we extend an already existing simulator for tunnel FETs to fully take into account non...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...