Exploring semiconductor quantum dots and wires by high resolution electron microscopy

16th International Conference on Microscopy of Semiconducting MaterialsWe review in this communication our contribution to the structural characterisation of semiconductor quantum dots and wires by high resolution electron microscopy, both in phase-contrast and Z-contrast modes. We show how these techniques contribute to predict the preferential sites of nucleation of these nanostructures, and also determine the compositional distribution in 1D and 0D nanostructures. The results presented here were produced in the framework of the European Network of Excellence entitled "Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE)"This work was supported by the Spanish MCI (TEC2008-06756-C03-02/TEC, Consolider-Ingenio 2010 CSD2006-00019), the CAM (S 0505ESP 0200), the Junta de Andalucia (PAI research groups TEP-120 and TIC-145; projects P08-TEP-03516 and PAI05-TEP-00383) and the Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, US DOE (MV and SJP).Peer reviewe