Passively Mode-locked 832-nm Vertical-External-Cavity Surface-Emitting Semiconductor Laser Producing 15.3-ps Pulses at 1.9-GHz Repetition Rate
- Wilcox, K.G.
- Mihoubi, Z.
- Elsmere, S.P.
- Quarterman, A.H.
- Foreman, H.D.
- Tropper, A.C.
Publication date
January 2008
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The authors report the first passively mode-locked 830-nm vertical-external-cavity surface-emitting laser. A semiconductor saturable absorber mirror with carrier recovery time governed by surface recombination was used to demonstrate pulses of 15.3 ps duration
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