The Design of a Dual Method Metal-Organic Chemical Vapor Deposition System

For the fabrication of semiconductor devices, solar cells, and infrared detectors, thin film deposition methods are required. Of the deposition methods currently available including MBE, LPE, and MOCVD; MOCVD is preferred due to its relatively low cost per wafer, versatility, and high wafer throughput. Requirements which must be considered in the design of a deposition system are discussed. An MOCVD system is designed such that MOCVD can be carried out by plasma enhanced deposition (PED) or low pressure metal-organic chemical vapor deposition (LPMOCVD). As a result of the inherent characteristics of the two methods, a wide range of operational temperatures and pressures are possible. Software is developed for system control including a graphical display of the process schematic. The deposition of GaAS on Si is given as one possible application for this type system