Thesis (Ph.D.)--University of Washington, 2021In this dissertation, strain engineering is utilized to modulate the bandgap structure of monolayer MoS2 and enhance its catalytic performances. A general electron-beam lithography fabrication process is developed to fabricate a flexible electrochemical nanodevice, which is further combined with a biaxial beam bending method to apply biaxial tensile strain on the monolayer MoS2 samples. After introducing the tensile strain, the electronic states and the electrochemical capacitance of the monolayer MoS2 are characterized using two types of experiments. In the first experiment, the newly developed nanodevice is applied to measure the Density of States (DOS) of the MoS2. Measuring the intrinsic DOS...
We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be...
Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, t...
The sensitive dependence of the electronic and thermoelectric properties of MoS2 on applied strain o...
In this paper, we studied the electronic properties, effective masses, and carrier mobility of monol...
Molybdenum disulfide (MoS2) has been demonstrated to be a potential catalyst in the hydrogen evoluti...
Molybdenum disulphide (MoS2) is an earth-abundant layered semiconductor that can be exfoliated into...
We utilize first-principles calculations within density-functional theory to investigate the possibi...
The nature of the electron density localization in a MoS2 monolayer under 0 % to 11% tensile strain ...
The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating str...
Surface sites of extensively exposed basal planes of MoS 2 monolayer nanosheets, prepared via BuLi e...
The availability and catalytic activity of the cost-efficient electrocatalysts are the dominant fact...
Strain in layered transition-metal dichalcogenides (TMDs) is a type of effective approach to enhance...
Irradiation of 2D sheets of transition metal dichalcogenides with ion beams has emerged as an effect...
In this paper, mechanisms behind enhancement of catalytic activity of MoS2 monolayer (three atomic l...
Molybdenum disulfide (MoS2) has attracted tremendous attention over the past decade due to their exc...
We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be...
Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, t...
The sensitive dependence of the electronic and thermoelectric properties of MoS2 on applied strain o...
In this paper, we studied the electronic properties, effective masses, and carrier mobility of monol...
Molybdenum disulfide (MoS2) has been demonstrated to be a potential catalyst in the hydrogen evoluti...
Molybdenum disulphide (MoS2) is an earth-abundant layered semiconductor that can be exfoliated into...
We utilize first-principles calculations within density-functional theory to investigate the possibi...
The nature of the electron density localization in a MoS2 monolayer under 0 % to 11% tensile strain ...
The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating str...
Surface sites of extensively exposed basal planes of MoS 2 monolayer nanosheets, prepared via BuLi e...
The availability and catalytic activity of the cost-efficient electrocatalysts are the dominant fact...
Strain in layered transition-metal dichalcogenides (TMDs) is a type of effective approach to enhance...
Irradiation of 2D sheets of transition metal dichalcogenides with ion beams has emerged as an effect...
In this paper, mechanisms behind enhancement of catalytic activity of MoS2 monolayer (three atomic l...
Molybdenum disulfide (MoS2) has attracted tremendous attention over the past decade due to their exc...
We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be...
Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, t...
The sensitive dependence of the electronic and thermoelectric properties of MoS2 on applied strain o...