Add to ORKGgrant No.SGS20/164/OHK3/3T/13, SGS21/116/OHK3/2T/13Current collapse in gallium nitridebased transistors limittheir use in high powerand high frequencyconverters. In some cases, it makes the conduction losses to double. This paper investigates the measurement of dynamic on-state resistance for various cases such as blocking voltage and switching frequency. The optimum minimal length of pulses wasdetermined in the case of three phase inverterto minimize the influence of current collapse
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above it...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above it...
SGS20/164/OHK3/3T/13The current collapse phenomenon increases conduction losses in high electron mo...
The gallium nitride transistors suffer from current collapse effect in operation regions, which lead...
The Gallium Nitride, high electron mobility transistor (GaN HEMT) has emerged as a promising replace...
Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is ...
Defense is held on 21.9.2021 12:15 – 15:15 via remote technology, https://aalto.zoom.us/j/6262211...
Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for the degradatio...
The ever-increasing demands on the efficiency and power density of power electronics converters lead...
High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the developm...
Gallium nitride (GaN) technology is being adopted in a variety of power electronic applications due ...
Gallium Nitride (GaN) power devices are an emerging technology that have only recently become availa...
Gallium nitride high-electron-mobility transistors (GaN-HEMTs) suffer from trapping effects that inc...
This paper presents a GaN transistor half-bridge prototype with robust pulse by pulse current limiti...
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above it...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above it...
SGS20/164/OHK3/3T/13The current collapse phenomenon increases conduction losses in high electron mo...
The gallium nitride transistors suffer from current collapse effect in operation regions, which lead...
The Gallium Nitride, high electron mobility transistor (GaN HEMT) has emerged as a promising replace...
Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is ...
Defense is held on 21.9.2021 12:15 – 15:15 via remote technology, https://aalto.zoom.us/j/6262211...
Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for the degradatio...
The ever-increasing demands on the efficiency and power density of power electronics converters lead...
High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the developm...
Gallium nitride (GaN) technology is being adopted in a variety of power electronic applications due ...
Gallium Nitride (GaN) power devices are an emerging technology that have only recently become availa...
Gallium nitride high-electron-mobility transistors (GaN-HEMTs) suffer from trapping effects that inc...
This paper presents a GaN transistor half-bridge prototype with robust pulse by pulse current limiti...
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above it...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
GaN-HEMTs suffer from trapping effects which increases device ON-state resistance (RDS(on)) above it...