Method for manufacturing micromechanical components

The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.Patent family as of 27.8.2021 CN101351400 A 20090121 CN200680019491 20060602 CN101351400 B 20130424 CN200680019491 20060602 FI121539 B 20101231 FI20050000592 20050603 FI20050592 A 20061204 FI20050000592 20050603 FI20050592 A0 20050603 FI20050000592 20050603 GB200724114 A0 20080130 GB20070024114 20060602 GB2441465 A1 20080305 GB20070024114 20060602 GB2441465 B2 20110309 GB20070024114 20060602 HK1118528 A1 20090213 HK20080109828 20080904 HK1118528 A3 20090213 HK20080109828 20080904 HK1118528 B 20111014 HK20080109828 20080904 US2009206423 AA 20090820 US20060920687 20060602 US7882741 BB 20110208 US20060920687 20060602 US2011070675 AA 20110324 US20100884823 20100917 US8236694 BB 20120807 US20100884823 20100917 WO06128958 A2 20061207 WO2006FI00174 20060602 WO06128958 A3 20070405 WO2006FI00174 20060602Link to current patent family on right