Temperature compensated plate resonator

The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*1020 cm-3 or more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF2) to be 12 ppb/C2 or less at least at one temperature. Several practical implementations are presented.Patent family as of 19.11.2021CN107005224 A 20170801 CN201580064707 20151002 CN107005224 B 20210615 CN201580064707 20151002 DE602015028153 D1 20190502 DE201560028153T 20151002 EP3202035 A1 20170809 EP20150786990 20151002 EP3202035 B1 20190410 EP20150786990 20151002 JP2017531949 T2 20171026 JP20170517790T 20151002 JP6567661 B2 20190828 JP20170517790T 20151002 US2016099704 AA 20160407 US20150874518 20151005 US9837981 BB 20171205 US20150874518 20151005 WO16051025 A1 20160407 WO2015FI50661 20151002Link to current patent family on right