The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memories have been attributed to repetitive formation and breakage of the conductive pathways inside a solid electrolyte. However, direct evidence of such pathway existence and their formations has never been provided. Herein, we reproduced the switching behavior of a Ag/Ag(2)S/W sandwich structure inside a high-resolution transmission electron microscope equipped with a scanning tunneling microscope unit. The on/off current ratio of 5 orders of magnitude was documented. The in situ formation and breakage of a nanoscale conductive channel were ultimately verified in real time and under atomic resolution. We found that a conducting Ag(2)S argentit...
Density functional/molecular dynamics simulations have been performed to shed light on the drift of ...
Density functional/molecular dynamics simulations have been performed to shed light on the drift of ...
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic ti...
The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memo...
A silver sulfide (Ag2S) island as an ionic conductor in resistive switching memories was formed and ...
Creation of nanometer-scale conductive filaments in resistive switching devices makes them appealing...
With the ever decreasing size of electronic components, there is a continuous necessity to make ever...
Resistive switching memories have gained an increased interest due to the possibilities for downscal...
Reversible and reproducible formation and dissolution of silver conductive filaments are studied in ...
Memristive electrochemical metallization (ECM) devices based on cation migration and electrochemical...
AbstractA silver sulfide (Ag2S) island as an ionic conductor in resistive switching memories was for...
Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effec...
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip...
Reversible and reproducible formation and dissolution of silver conductive filaments are studied in ...
© 2017, The Author(s). Atom-probe tomography of Ag-photodoped amorphous thin-film Ge 40 S 60 , the m...
Density functional/molecular dynamics simulations have been performed to shed light on the drift of ...
Density functional/molecular dynamics simulations have been performed to shed light on the drift of ...
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic ti...
The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memo...
A silver sulfide (Ag2S) island as an ionic conductor in resistive switching memories was formed and ...
Creation of nanometer-scale conductive filaments in resistive switching devices makes them appealing...
With the ever decreasing size of electronic components, there is a continuous necessity to make ever...
Resistive switching memories have gained an increased interest due to the possibilities for downscal...
Reversible and reproducible formation and dissolution of silver conductive filaments are studied in ...
Memristive electrochemical metallization (ECM) devices based on cation migration and electrochemical...
AbstractA silver sulfide (Ag2S) island as an ionic conductor in resistive switching memories was for...
Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effec...
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip...
Reversible and reproducible formation and dissolution of silver conductive filaments are studied in ...
© 2017, The Author(s). Atom-probe tomography of Ag-photodoped amorphous thin-film Ge 40 S 60 , the m...
Density functional/molecular dynamics simulations have been performed to shed light on the drift of ...
Density functional/molecular dynamics simulations have been performed to shed light on the drift of ...
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic ti...