Valence-band photoelectron spectroscopy of CuInSe₂, CuInS₂, and CuGaSe₂ surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials
CuInSe₂, CuInS₂ and CuGaSe₂ are I-III-VI₂ compound semiconductors with a chalcopyrite structure. The...
The electronic defects in any semiconductor play a decisive role for the usability of this material ...
Cu poor chalcopyrites are highly compensated and their band structure is dominated by fluctuating po...
Valence-band photoelectron spectroscopy of CuInSe₂, CuInS₂, and CuGaSe₂ surfaces and interfaces give...
The interface formation between stoichiometric chalcopyrite CuInSe2 and the copper deficient defect ...
The unusual defect chemistry of polycrystalline Cu In,Ga Se2 CIGSe thin films is a main issue for...
The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which ar...
The unusual defect chemistry of polycrystalline Cu(In,Ga)Se<sub>2</sub> (CIGSe) thin films is a ma...
Red illumination of the reverse biased device ROB causes persistent increase of the capacitance of...
The unusual optoelectronic properties of chalcopyrite grain boundaries GBs have become the subject...
The near-surface region of thin-film polycrystalline (PX) CuIn1-xGaxSe2 (CIGS) is considered importa...
Evolution of the valence-band structure at gradually increasing copper content has been analysed by ...
This paper briefly summarizes the knowledge accumulated in the literature on the copper indium galli...
The electrical and optoelectronic properties of materials are determined by the chemical potentials ...
CuInSe₂, CuInS₂ and CuGaSe₂ are I-III-VI₂ compound semiconductors with a chalcopyrite structure. The...
The electronic defects in any semiconductor play a decisive role for the usability of this material ...
Cu poor chalcopyrites are highly compensated and their band structure is dominated by fluctuating po...
Valence-band photoelectron spectroscopy of CuInSe₂, CuInS₂, and CuGaSe₂ surfaces and interfaces give...
The interface formation between stoichiometric chalcopyrite CuInSe2 and the copper deficient defect ...
The unusual defect chemistry of polycrystalline Cu In,Ga Se2 CIGSe thin films is a main issue for...
The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which ar...
The unusual defect chemistry of polycrystalline Cu(In,Ga)Se<sub>2</sub> (CIGSe) thin films is a ma...
Red illumination of the reverse biased device ROB causes persistent increase of the capacitance of...
The unusual optoelectronic properties of chalcopyrite grain boundaries GBs have become the subject...
The near-surface region of thin-film polycrystalline (PX) CuIn1-xGaxSe2 (CIGS) is considered importa...
Evolution of the valence-band structure at gradually increasing copper content has been analysed by ...
This paper briefly summarizes the knowledge accumulated in the literature on the copper indium galli...
The electrical and optoelectronic properties of materials are determined by the chemical potentials ...
CuInSe₂, CuInS₂ and CuGaSe₂ are I-III-VI₂ compound semiconductors with a chalcopyrite structure. The...
The electronic defects in any semiconductor play a decisive role for the usability of this material ...
Cu poor chalcopyrites are highly compensated and their band structure is dominated by fluctuating po...
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