In this dissertation, we used ab-initio full potential linear muffin-tin orbital (FP-LMTO) method to study native defects, chlorine and nitrogen doping, and chromium incorporation issues in ZnSe and ZnMgSe alloys. The method we used and the results we obtained are discussed in details. In chapter 1, an introduction to recent studies in ZnSe was given. The methodology was discussed at chapter 2. In chapter 3, we studied lattice relaxation around native defects in ZnSe and formation energies for these native defects. Our results were compared with other theoretical results. In chapter 4, chlorine doping in ZnSe and ZnMgSe alloys are modeled, our results indicated that the addition of Mg reduces the formation energy for chlorine on the Se s...
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in Z...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in Z...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
In this paper we present a comprehensive study of the tetrahedral semiconductor ZnSe crystallizing i...
In this paper we present a comprehensive study of the tetrahedral semiconductor ZnSe crystallizing i...
In this paper we present a comprehensive study of the tetrahedral semiconductor ZnSe crystallizing i...
Defect complexes formed by chlorine-impurity atoms and native defects in ZnSe are studied by first-p...
Defect complexes formed by chlorine-impurity atoms and native defects in ZnSe are studied by first-p...
A comprehensive lattice dynamical study is reported to emphasize the vibrational behavior of perfect...
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in Z...
Defect complexes formed by chlorine-impurity atoms and native defects in ZnSe are studied by first-p...
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in Z...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in Z...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
Electron irradiation affects ZnSe and ZnMgSe during growth by molecular beam epitaxy. Se desorption ...
In this paper we present a comprehensive study of the tetrahedral semiconductor ZnSe crystallizing i...
In this paper we present a comprehensive study of the tetrahedral semiconductor ZnSe crystallizing i...
In this paper we present a comprehensive study of the tetrahedral semiconductor ZnSe crystallizing i...
Defect complexes formed by chlorine-impurity atoms and native defects in ZnSe are studied by first-p...
Defect complexes formed by chlorine-impurity atoms and native defects in ZnSe are studied by first-p...
A comprehensive lattice dynamical study is reported to emphasize the vibrational behavior of perfect...
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in Z...
Defect complexes formed by chlorine-impurity atoms and native defects in ZnSe are studied by first-p...
Total-energy calculations for defect complexes formed by nitrogen impurities and native defects in Z...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...
In this paper we show that the reproducibility of carrier concentration after annealing treatment of...