This thesis presents the results of three studies of the photoluminescent properties of Si and Ge at low temperature. The first study is presented in Chapter 2 and deals with the transport of photoexcited electron-hole plasma (Ef:JP} in Si following pulsed laser excitation at temperatures below 50 K. The goal here was to determine the rate at which the photoexcited carriers expand fran the excitation surface into the crystal and. to determine the primary motive force. We found that for laser excitation levels up to the threshold for visible surface damage, the carriers moved away from the excitation region at velocities near or below the speed of sound. By imaging the expansion process, we found that under intense excitation levels the carr...
In Part I of this thesis, we present experimental evidence demonstrating that a metal-insulator (M-I...
The near-2-Eg luminescence of highly pure silicon has been studied at liquid helium temperature unde...
We have performed photoluminescence (PL) measurements on intrinsic and doped bulk Ge substrates as a...
This thesis presents the results of three studies of the photoluminescent properties of Si and Ge at...
This thesis presents the results of three studies of the excitonic system in Ge. These studies emplo...
This thesis describes work on the thermodynamics and transport properties of photoexcited carriers i...
This thesis presents results of experiments on the interaction of phonons and photo-excited electron...
153 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.This thesis presents the resu...
166 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.This thesis describes work on...
This thesis presents the results of a wide ranging study of the transport properties of photo-excite...
Part I of this thesis deals with 3 topics concerning the luminescence from bound multi-exciton com...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The electroluminescence (EL) of thick fully strained SiGe layers is investigated in order to clarify...
This thesis is about a theoretical study of the properties of photoexcited holes in p-type Ge sample...
212 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.In Part I of this thesis, we ...
In Part I of this thesis, we present experimental evidence demonstrating that a metal-insulator (M-I...
The near-2-Eg luminescence of highly pure silicon has been studied at liquid helium temperature unde...
We have performed photoluminescence (PL) measurements on intrinsic and doped bulk Ge substrates as a...
This thesis presents the results of three studies of the photoluminescent properties of Si and Ge at...
This thesis presents the results of three studies of the excitonic system in Ge. These studies emplo...
This thesis describes work on the thermodynamics and transport properties of photoexcited carriers i...
This thesis presents results of experiments on the interaction of phonons and photo-excited electron...
153 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.This thesis presents the resu...
166 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.This thesis describes work on...
This thesis presents the results of a wide ranging study of the transport properties of photo-excite...
Part I of this thesis deals with 3 topics concerning the luminescence from bound multi-exciton com...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The electroluminescence (EL) of thick fully strained SiGe layers is investigated in order to clarify...
This thesis is about a theoretical study of the properties of photoexcited holes in p-type Ge sample...
212 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.In Part I of this thesis, we ...
In Part I of this thesis, we present experimental evidence demonstrating that a metal-insulator (M-I...
The near-2-Eg luminescence of highly pure silicon has been studied at liquid helium temperature unde...
We have performed photoluminescence (PL) measurements on intrinsic and doped bulk Ge substrates as a...