One may infer from experimental results that application of a transverse magnetic field to a Czochralski crystal puller improves the quality of the resulting crystals. The melt flow is difficult to model; it is nonlinear and three-dimensional with additional complexity generated by the magnetic field. Two methods are shown by which the problem is reduced: a small field limit and a large field limit. Results are obtained for these cases by a mixture of analytic and numerical methods.U of I OnlyETDs are only available to UIUC Users without author permissio
The paper describes a numerical simulation tool for heat and mass transfer processes in large diamet...
It is a well-known fact that in the Czochralski crystal growth, as well as in all other crystal grow...
77 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.All the models involve a radia...
One may infer from experimental results that application of a transverse magnetic field to a Czochra...
Three-dimensional transient numerical simulations were carried out to investigate the melt convectio...
In this paper we consider the effect of various configurations of magnetic field on an idealised mod...
This review considers the stability of melt motion in two simplified models of semiconductor crystal...
The effects of crucible geometry on the flow pattern and the oxygen concentration at the crystal-mel...
This paper deals with the mathematical modeling and simulation of crystal growth processes by the so...
A lot of the physical and the numerical modeling of Czochralski crystal growth is done on the generi...
In this paper we develop a mathematical model to investigate the effect of growth rate fluctuations ...
Abstract. The Czochralski method of the industrial production of a sili-con single crystal consists ...
High-quality silicon crystals provide the basis of many industrial technological advances, including...
In this paper, the optimal control of traveling magnetic fields in a process of crystal growth from ...
A magnetic field is imposed on the melt during Czochralski crystal growth to control fluid flow. The...
The paper describes a numerical simulation tool for heat and mass transfer processes in large diamet...
It is a well-known fact that in the Czochralski crystal growth, as well as in all other crystal grow...
77 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.All the models involve a radia...
One may infer from experimental results that application of a transverse magnetic field to a Czochra...
Three-dimensional transient numerical simulations were carried out to investigate the melt convectio...
In this paper we consider the effect of various configurations of magnetic field on an idealised mod...
This review considers the stability of melt motion in two simplified models of semiconductor crystal...
The effects of crucible geometry on the flow pattern and the oxygen concentration at the crystal-mel...
This paper deals with the mathematical modeling and simulation of crystal growth processes by the so...
A lot of the physical and the numerical modeling of Czochralski crystal growth is done on the generi...
In this paper we develop a mathematical model to investigate the effect of growth rate fluctuations ...
Abstract. The Czochralski method of the industrial production of a sili-con single crystal consists ...
High-quality silicon crystals provide the basis of many industrial technological advances, including...
In this paper, the optimal control of traveling magnetic fields in a process of crystal growth from ...
A magnetic field is imposed on the melt during Czochralski crystal growth to control fluid flow. The...
The paper describes a numerical simulation tool for heat and mass transfer processes in large diamet...
It is a well-known fact that in the Czochralski crystal growth, as well as in all other crystal grow...
77 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.All the models involve a radia...