This paper discusses different application relevant electrical loading cases of an IGBT module of a power inverter. Thereby, different operation conditions such as pulse frequencies, inverter output currents and output frequencies, as well as two different operation modes are discussed. Each load case investigation is conducted by electrical, thermal, and in situ vibration measurements. Moreover, on the base of finite element analyses a deeper insight is gained into reliability relevant thermo-mechanical behavior. For this purpose an IGBT module is operated at a load of 30% to 80% of its nominal value in order to cause representative thermo-mechanical displacements of dies and bond wires. By applying an inverter output frequency in a range ...
18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, BORDEAUX, ...
11 páginas, 15 figuras.This paper analyzes the impact of a nonuniform temperature distribution insid...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
This study comprises the electrical analysis of an experimental investigation on thermo-mechanical v...
The subject of this investigation was determination of thermo-mechanically induced displacement of t...
EPE 2007 - 12th European Conference on Power Electronics and Applications, Aalborg, DANEMARK, 02-/09...
International audienceThe paper presents the impact of thermal cycling frequency on the lifetime of ...
Because of the need for electronics use at temperatures beyond 150??C, new high temperature intercon...
New demands on the thermo-mechanical design of sintered silver interconnections emerge. Development ...
The lifetime of an IGBT power electronics module under cyclic temperature loading conditions has be...
Today, power electronic reliability is a main subject of interest for many companies and laboratorie...
This paper presents a series of experiment results on the ageing effects of cyclic junction temperat...
On board electric vehicles (EVs) and hybrid (HEV), the functions of traction is provided by power el...
Because of the need for electronics use at temperatures beyond 150 deg C, new high temperature inter...
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling ca...
18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, BORDEAUX, ...
11 páginas, 15 figuras.This paper analyzes the impact of a nonuniform temperature distribution insid...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
This study comprises the electrical analysis of an experimental investigation on thermo-mechanical v...
The subject of this investigation was determination of thermo-mechanically induced displacement of t...
EPE 2007 - 12th European Conference on Power Electronics and Applications, Aalborg, DANEMARK, 02-/09...
International audienceThe paper presents the impact of thermal cycling frequency on the lifetime of ...
Because of the need for electronics use at temperatures beyond 150??C, new high temperature intercon...
New demands on the thermo-mechanical design of sintered silver interconnections emerge. Development ...
The lifetime of an IGBT power electronics module under cyclic temperature loading conditions has be...
Today, power electronic reliability is a main subject of interest for many companies and laboratorie...
This paper presents a series of experiment results on the ageing effects of cyclic junction temperat...
On board electric vehicles (EVs) and hybrid (HEV), the functions of traction is provided by power el...
Because of the need for electronics use at temperatures beyond 150 deg C, new high temperature inter...
Power semiconductor devices are vulnerable to thermomechanical fatigue due to temperature cycling ca...
18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, BORDEAUX, ...
11 páginas, 15 figuras.This paper analyzes the impact of a nonuniform temperature distribution insid...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...