Investigation of holes transport in the organic field effect transistors

In this work, the peculiarities of hole transfer in organic field-effect transistors are investigated. First, the theory of charge carrier motion in organic materials, carrier mobility dependance on temperature electric field and charge carrier density are reviewed. OFET fabrication methods, as well as promising and widely used methods of measuring mobility, one of the most important parameters of these devices, are distinguished in the literature. In the next part of the study, an OFET is made with a semiconductor layer of MDMO-PPV polymer. Hole mobility of said device is found using the current transient method and using stacionary I-V characteristics - 1.4∙10-4 cm2V-1s-1 ir 6.1∙10-5 cm2V-1s-1, accordingly. Also during the experiment, it was observed that in the presence of weak electric fields (up to 2 MV/cm) there were point-like burned through punctures in the dielectric layer. The aim of this work is to investigate the peculiarities of hole transfer in an organic field-effect transistor made of MDMO-PPV polymer and to evaluate the mobility of holes in it