MBE GROWTH OF STRAINED LAYER INSB/INALSB STRUCTURES
- WHITEHOUSE, CR
- McConville, Chris
- WILLIAMS, GM
- CULLIS, AG
- BARNETT, SJ
- SAKER, MK
- SKOLNICK, MS
- PITT, AD
DOIAbstract
ABSTRACTThe MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.</jats:p
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