Optical properties and morphology of InAs/InP (113B) surface quantum dots
- Nakkar, Abdulhadi
- Folliot, Hervé
- Le Corre, Alain
- Caroff, Philippe
- Doré, François
- Elias, Georges
- Labbe, Christophe
- Loualiche, Slimane
- Alghoraibi, Ibrahim
- Pistol, M.E.
- Ellström, C.
DOIAbstract
International audienceWe report on long-wavelength photoluminescence (PL) emission at room temperature from self-organized InAs urface quantum dots (SQDs) grown by Gas Source Molecular Beam Epitaxy (GSMBE) on a GaInAsP / InP (113)B substrate. The influence of arsenic pressure conditions during growth on the PL emission of surface quantum dots is detailed as well as oxide/contamination layer formation after growth. Experimental results are in good agreement with six-band k*p theory in the envelope function approximation
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