Add to ORKGInternational audienceThe carrier dynamics in InAs double-cap quantum dots DC-QDs grown on InP113B are investigated. The shape of these QDs can be controlled during the growth, yielding an emission wavelength of the system of about 1.55 m at room temperature. The DC-QD dynamics is studied by time-resolved photoluminescence experiments at low temperature for various excitation densities. A simplified dynamic model is developed, yielding results consistent with experimental data. This analysis yields the determination of the Auger coefficients and the intradot relaxation time in this system
Abstract—In this paper, a theoretical model based on rate equations is used to investigate static an...
We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emi...
We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nomina...
International audienceThe electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emit...
International audienceThe carrier dynamics in InAs double-cap quantum dots DC-QDs grown on InP113B a...
International audienceThanks to optimized growth techniques, a high density of uniformly sized InAs ...
International audienceQuantum dot (QD) lasers exhibit many interesting and useful properties such as...
The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quan...
We study the carrier capture and relaxation in self-assembled InAs/GaAs quantum dots (QDs) using ble...
In this paper, a theoretical model based on rate equations is used to investigate static and dynami...
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied u...
Femtosecond time-resolved photoluminescence measured by frequency up-conversion has been used to inv...
International audienceOptical transitions in self-organized InAs quantum dots (QDs) grown on In0.52A...
We present a Time Resolved Differential Reflectivity (TRDR) study of LT (low temperature grown) Stra...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
Abstract—In this paper, a theoretical model based on rate equations is used to investigate static an...
We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emi...
We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nomina...
International audienceThe electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emit...
International audienceThe carrier dynamics in InAs double-cap quantum dots DC-QDs grown on InP113B a...
International audienceThanks to optimized growth techniques, a high density of uniformly sized InAs ...
International audienceQuantum dot (QD) lasers exhibit many interesting and useful properties such as...
The energy and excitation density dependence of the carrier dynamics in self-assembled InAs/InP quan...
We study the carrier capture and relaxation in self-assembled InAs/GaAs quantum dots (QDs) using ble...
In this paper, a theoretical model based on rate equations is used to investigate static and dynami...
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied u...
Femtosecond time-resolved photoluminescence measured by frequency up-conversion has been used to inv...
International audienceOptical transitions in self-organized InAs quantum dots (QDs) grown on In0.52A...
We present a Time Resolved Differential Reflectivity (TRDR) study of LT (low temperature grown) Stra...
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied ...
Abstract—In this paper, a theoretical model based on rate equations is used to investigate static an...
We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emi...
We report on growth and characterization of individual InAsP/GaInP quantum dots with variable nomina...