Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

International audienceLow-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225 A/cm² (~45 A/cm² per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52 K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region