The near- and mid-infrared emission properties of Tm3+-doped GeGaS-CsI chalcogenide glasses

International audienceSerials of chalcogenide glasses based on composition of 72GeS2-18Ga2S3-10CsI (in mol%) and doped with high Tm3+ content (up to 10,000 ppm) were prepared, and their luminescence properties were investigated under excitation with 800 nm laser. The influences of doping concentration on Judd-Ofelt intensity parameter Ωi, spontaneous transition probability A, fluorescence branching ratio β, and radiative lifetime τrad of Tm3+ in the samples were studied. Four infrared emission bands observed were centered at 1.48, 1.8, 2.3, and 3.8 μm, corresponding to optical transitions 3H4 → 3F4, 3F4 → 3H6, 3H4 → 3H5 and 3H5 → 3F4, respectively. For 1.0 wt.% Tm3+: doped sample, no concentration quenching was observed and its emission cross-sections at 2.3 and 3.8 μm calculated by using Füchtbauer-Ladenburg equation were 6.85 × 10−21 and 7.66 × 10−21 cm−2, respectively