International audienceThis paper reports recent results on InAs/InP quantum dash-based, two-section, passively mode- locked lasers pulsing at 41 GHz and 10.6 GHz and emitting at 1.59 lm at 20°C. The 41-GHz device (1 mm long) starts lasing at 25 mA under uniform injection and the 10.6 GHz (4 mm long) at 71 mA. Their output pulses are significantly chirped. The 41-GHz laser exhibits 7 ps pulses after propagation in 60 m of a single-mode fiber. The 10.6-GHz laser generates one picosecond pulses with 545 m of a single-mode fiber. Its single side-band phase noise does not exceed -80 dBc/Hz at 100 kHz offset, leading to an average timing jitter of 800 fs
First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths...
We have designed, grown and fabricated InAs/InP quantum dot (QD) waveguides as the gain materials of...
This PhD thesis deals with the integration of InP based quantum dash mode locked lasers for use in o...
International audienceThis paper reports the fabrication and the characterisation of a 10 GHz two-se...
International audienceIn this paper, we report the development of an asymmetrical cladding single-se...
Several applications are pushing the development of high performance mode-locked lasers: generation ...
International audienceHere we report for the first time a passive mode-locking of single section Fab...
International audienceWe report original results on GSMBE grown InAs/InP QD structures. Three single...
Abstract We report on the design, growth, fabrication, and performance of InAs/InP quantum dash (QD)...
A passive InAs/InP quantumdot (QD) semiconductor mode-locked laser (MLL) emitting 403-GHz repetition...
We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and...
In this paper we present the remarkable characteristics of quantum dash mode-locked lasers and how t...
For the first time passive mode-locking in two-section quantum-dot lasers operating at wavelengths a...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
A packaged 10GHz monolithic two-section quantum-dot mode-locked laser is presented, with record narr...
First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths...
We have designed, grown and fabricated InAs/InP quantum dot (QD) waveguides as the gain materials of...
This PhD thesis deals with the integration of InP based quantum dash mode locked lasers for use in o...
International audienceThis paper reports the fabrication and the characterisation of a 10 GHz two-se...
International audienceIn this paper, we report the development of an asymmetrical cladding single-se...
Several applications are pushing the development of high performance mode-locked lasers: generation ...
International audienceHere we report for the first time a passive mode-locking of single section Fab...
International audienceWe report original results on GSMBE grown InAs/InP QD structures. Three single...
Abstract We report on the design, growth, fabrication, and performance of InAs/InP quantum dash (QD)...
A passive InAs/InP quantumdot (QD) semiconductor mode-locked laser (MLL) emitting 403-GHz repetition...
We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and...
In this paper we present the remarkable characteristics of quantum dash mode-locked lasers and how t...
For the first time passive mode-locking in two-section quantum-dot lasers operating at wavelengths a...
A novel 40 GHz passively mode-locked AlGaInAs/InP 1.55 μm laser was demonstrated with low diver...
A packaged 10GHz monolithic two-section quantum-dot mode-locked laser is presented, with record narr...
First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths...
We have designed, grown and fabricated InAs/InP quantum dot (QD) waveguides as the gain materials of...
This PhD thesis deals with the integration of InP based quantum dash mode locked lasers for use in o...