International audienceFully epitaxial Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) have been tested with respect to symmetry-enforced spin filtering. The Fe(110) electrodes exhibit Σ1↑ and Σ1↓ spin states, both crossing the Fermi level, but with a group velocity about 50% smaller for the minority states compared to the majority ones. These epitaxial but symmetry-mismatched MTJs yield tunneling magnetoresistance (TMR) values of 54% at 1.5 K and 28% at room temperature. The TMR value and the estimated tunneling spin polarization are consistent with a partial spin filtering due to the Σ1↑ states partially compensated by the Σ1↓ states
Many possible applications have arisen in the domain of spin electronics since the prediction and ex...
Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction...
International audienceFully epitaxial Fe(001)∕Fe3O4(001)∕MgO(001)∕Co micron-sized magnetic tunnel ju...
Fully epitaxial Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions(MTJs)( have been tested with resp...
Monocrystalline Fe(1 00)/MgO(1 00)/Fe(1 00) magnetic tunnel junctions (MT J), elaborated by Molecula...
Jury: B. Dieny, H. Dreyssé, A. George, P. Grünberg,A. Schuhl,E. Snoeck,C. TiusanMonocrystalline Fe(1...
Calculation of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe(001) junction is repo...
We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions o...
Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in ...
Guerrero R, Aliev FG, Villar R, et al. Low-frequency noise and tunneling magnetoresistance in Fe(110...
Équipe 101 : Nanomagnétisme et électronique de spinInternational audienceThe strong impact of molecu...
Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.Interfacial effects...
Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe) is one of the most promising materials fo...
International audienceA spin filtering effect has been evidenced in epitaxial MnFe$_2$O$_4$ tunnel b...
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions a...
Many possible applications have arisen in the domain of spin electronics since the prediction and ex...
Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction...
International audienceFully epitaxial Fe(001)∕Fe3O4(001)∕MgO(001)∕Co micron-sized magnetic tunnel ju...
Fully epitaxial Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions(MTJs)( have been tested with resp...
Monocrystalline Fe(1 00)/MgO(1 00)/Fe(1 00) magnetic tunnel junctions (MT J), elaborated by Molecula...
Jury: B. Dieny, H. Dreyssé, A. George, P. Grünberg,A. Schuhl,E. Snoeck,C. TiusanMonocrystalline Fe(1...
Calculation of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe(001) junction is repo...
We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions o...
Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in ...
Guerrero R, Aliev FG, Villar R, et al. Low-frequency noise and tunneling magnetoresistance in Fe(110...
Équipe 101 : Nanomagnétisme et électronique de spinInternational audienceThe strong impact of molecu...
Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.Interfacial effects...
Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe) is one of the most promising materials fo...
International audienceA spin filtering effect has been evidenced in epitaxial MnFe$_2$O$_4$ tunnel b...
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions a...
Many possible applications have arisen in the domain of spin electronics since the prediction and ex...
Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction...
International audienceFully epitaxial Fe(001)∕Fe3O4(001)∕MgO(001)∕Co micron-sized magnetic tunnel ju...