Negative Capacitance Field-Effect Transistor (NCFET) is an emerging technology that incorporates a ferroelectric layer within the transistor gate stack to overcome the fundamental limit of sub-threshold swing in transistors. Even though physics-based NCFET models have been recently proposed, system-level NCFET models do not exist and research is still in its infancy. In this work, we are the first to investigate the impact of NCFET on performance, energy and cooling costs in many-core processors. Our proposed methodology starts from accurate physics models all the way up to the system level, where the performance and power of a many-core are widely affected. Our new methodology and system-level models allow, for the first time, the explorat...
The long-standing tug-of-war between off-state leakage power consumption and switching speed has po...
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation ...
In this paper, we propose and analyse the performance of negative capacitance tunnel field-effect-tr...
With the continued scaling of field-effect transistors (FETs) we have past the point where short-cha...
Energy consumption is a key optimization goal for all modern processors. Negative Capacitance Field-...
With the scaling of the transistor, fabrication of an actual device and modeling of an ultra-short c...
Negative capacitance field-effect transistor (NCFET) pushes the subthreshold swing beyond its fundam...
The IoT is one of the most trending businesses of modern times and has already opened a new world of...
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opport...
This is the first work to investigate the impact that Negative Capacitance Field-Effect Transistor (...
916-920We have reported the impact of process variation of virtual- source carbon nanotube field-eff...
Negative capacitance field effect transistors (NCFETs) are modeled in this study, with an emphasis o...
Conventional device scaling has been the main guiding principle of the MOS device engineering over t...
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K ch...
One of the major roadblocks in the continued scaling of standard CMOS technology is its alarmingly h...
The long-standing tug-of-war between off-state leakage power consumption and switching speed has po...
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation ...
In this paper, we propose and analyse the performance of negative capacitance tunnel field-effect-tr...
With the continued scaling of field-effect transistors (FETs) we have past the point where short-cha...
Energy consumption is a key optimization goal for all modern processors. Negative Capacitance Field-...
With the scaling of the transistor, fabrication of an actual device and modeling of an ultra-short c...
Negative capacitance field-effect transistor (NCFET) pushes the subthreshold swing beyond its fundam...
The IoT is one of the most trending businesses of modern times and has already opened a new world of...
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opport...
This is the first work to investigate the impact that Negative Capacitance Field-Effect Transistor (...
916-920We have reported the impact of process variation of virtual- source carbon nanotube field-eff...
Negative capacitance field effect transistors (NCFETs) are modeled in this study, with an emphasis o...
Conventional device scaling has been the main guiding principle of the MOS device engineering over t...
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K ch...
One of the major roadblocks in the continued scaling of standard CMOS technology is its alarmingly h...
The long-standing tug-of-war between off-state leakage power consumption and switching speed has po...
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation ...
In this paper, we propose and analyse the performance of negative capacitance tunnel field-effect-tr...