Novel charge integrating pulsed I (V) technique: A measurement of Fowler–Nordheim currents through thin SiO2 films
- Poler, J. C.
- Woodward, W. S.
- Irene, E. A.
DOIAbstract
The design, characterization and applications of a novel charge integrating pulsed current-voltage I(V) measurement are described. Tunneling transport through thin metal-oxide-semiconductor (MOS) capacitors is measured over ten orders of magnitude of current. Short pulse widths (<j s), allow electrical characterization of these films under high current densities, without significant charge injection. A study of the quantum interference of electrons during Fowler-Nordheim (FN) conduction, is used to illustrate the measurement
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