International audienceStructural changes of metals (Zn, Sb, In, Ga) and metal halides (AgI, ZnI2, CdI2, PbI2, BiI3) modified GeTe4 glasses were investigated with the aid of Raman spectroscopy. The Raman spectra of these glasses in the frequency region between 100 cm−1 and 300 cm−1 display four main bands at about 124, 140, 159 and 275 cm−1 which are contributed by Ge-Te, Te-Te, Te-Te and Ge-Ge vibration modes. The intensity of 159 cm−1 and 275 cm−1 bands vary with the addition of different glass modifiers. While the relative intensity of the 124 cm−1 and 140 cm−1 bands are insensitive to composition changes. Glass modifiers like Zn, In and Sb act as glass network unstabilizer which will disorganize the glass network by opening up the chain ...
Micro-Raman studies are conducted on as-quenched and annealed Ge15Te80 -_xIn5Agx glasses to probe th...
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga1...
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga1...
Chalcogenide glasses in the system AsxSe100-x, as well as As40Se60 and As50Se50 glasses doped with m...
The Raman spectra of binary GexS1-x chalcogenide glasses have been measured for various compositions...
The structure of (GeTe4)1−x(AgI)x (x = 0.15 and 0.25) glasses has been investigated by X-ray and neu...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
<p> The structures of pseudo-binary GeS2-Sb2S3, GeS2-CdS, Sb2S3-CdS, and pseudo-ternary GeS2-Sb2S3-...
In comparison to other chalcogenide glasses, Ge-Ga-S glasses have the largest rare-earth solubility....
Present investigation explores the structural changes that occur in glass network as a function of c...
We computed the Raman spectrum of amorphous GeTe by ab initio simulations and empirical bond polariz...
Micro-Raman studies are conducted on as-quenched and annealed Ge15Te80 -_xIn5Agx glasses to probe th...
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga1...
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga1...
Chalcogenide glasses in the system AsxSe100-x, as well as As40Se60 and As50Se50 glasses doped with m...
The Raman spectra of binary GexS1-x chalcogenide glasses have been measured for various compositions...
The structure of (GeTe4)1−x(AgI)x (x = 0.15 and 0.25) glasses has been investigated by X-ray and neu...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
International audienceThe structure of (GeTe4)1-x(AgI)x (x = 0.15 and 0.25) glasses has been inve...
<p> The structures of pseudo-binary GeS2-Sb2S3, GeS2-CdS, Sb2S3-CdS, and pseudo-ternary GeS2-Sb2S3-...
In comparison to other chalcogenide glasses, Ge-Ga-S glasses have the largest rare-earth solubility....
Present investigation explores the structural changes that occur in glass network as a function of c...
We computed the Raman spectrum of amorphous GeTe by ab initio simulations and empirical bond polariz...
Micro-Raman studies are conducted on as-quenched and annealed Ge15Te80 -_xIn5Agx glasses to probe th...
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga1...
The influence of time exposure, when exposed to above band gap light (3,52 eV) and annealing, on Ga1...