International audienceWe report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes
Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum ...
Abstract. We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for bro...
Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum ...
International audienceWe report on an optically excited InAs quantum dash vertical cavity surface em...
International audienceWe report an InP based vertical cavity surface emitting laser (VCSEL) achievin...
International audienceWe present the first demonstration of a vertical cavity surface emitting laser...
International audienceWe present an InP-VCSEL based on optimized InAs quantum-dashes (QDHs) nanostru...
International audienceQuantum dash based vertical cavity surface emitting lasers (VCSEL) on InP subs...
International audienceAn Optically-Pumped InAs Quantum Dash-based Vertical-External-Cavity Surface-E...
International audienceThe authors report the demonstration of a polarization-controlled vertical-cav...
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have dem...
The bright and spectrally pure photoluminescence (PL) of a-SiNx:H in a vertical cavity surface emitt...
The work presented in this dissertation focus on the development of InP-based semiconductor vertical...
poster session [ThP10]International audiencePolarization controlled quantum dashes (QDHs) VCSEL grow...
International audiencePolarization controlled quantum dashes (QDHs) Vertical Cavity Surface Emitting...
Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum ...
Abstract. We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for bro...
Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum ...
International audienceWe report on an optically excited InAs quantum dash vertical cavity surface em...
International audienceWe report an InP based vertical cavity surface emitting laser (VCSEL) achievin...
International audienceWe present the first demonstration of a vertical cavity surface emitting laser...
International audienceWe present an InP-VCSEL based on optimized InAs quantum-dashes (QDHs) nanostru...
International audienceQuantum dash based vertical cavity surface emitting lasers (VCSEL) on InP subs...
International audienceAn Optically-Pumped InAs Quantum Dash-based Vertical-External-Cavity Surface-E...
International audienceThe authors report the demonstration of a polarization-controlled vertical-cav...
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have dem...
The bright and spectrally pure photoluminescence (PL) of a-SiNx:H in a vertical cavity surface emitt...
The work presented in this dissertation focus on the development of InP-based semiconductor vertical...
poster session [ThP10]International audiencePolarization controlled quantum dashes (QDHs) VCSEL grow...
International audiencePolarization controlled quantum dashes (QDHs) Vertical Cavity Surface Emitting...
Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum ...
Abstract. We report on the development of wide gain InAs/InGaAlAs/InP quantum-dash structure for bro...
Microphotoluminescence (mu-PL) investigation has been performed at room temperature on InAs quantum ...