We have carried out variation al model calculations of the binding energy of a screened donor in a spherical GaAs/Gal_x~As quantum dot as a function of the quantum dot radius. We have found that the effect of screening on the binding energy of the donor becomes more pronounced as the radius of the quantum dot decreases. This behavior is similar to that obtained earlier in model calculations of the binding energy of a donor in a quantum well, or in a quantum-well wire
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)The effect of spatially dependent scree...
Shallow-donor states in quantum-sized semiconductor heterostructures are studied within the fraction...
ABSTARCT: Theoretical calculations have been used to assess the influence of both an external electr...
908-911A theoretical study has been carried out on the effect of applied stress on the binding ener...
467-470<span style="font-size:14.0pt;line-height: 115%;font-family:" times="" new="" roman";mso-far...
ABSTRACT: Using a variational method the binding energy has been calculated for a shallow donor impu...
AbstractThe donor binding energy of a hydrogenic donor impurity located in the center of a GaAs-AlxG...
Energies of the ground and some excited states of on-centre donors (D-O) in GaAs/Ga1-xAlxAs spherica...
We studied the simultaneous of the magnetic and electric field effects on the binding energy fo...
Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bou...
The ionization energies of a hydrogenic donor in a GaAs- Ga1-xAlxAs cubical quantum dot system are o...
The D°-h impurity-related photoluminescence spectra of confined donors in GaAs-(Ga,Al)As quantum wel...
The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by consider...
A variational calculation within the effective-mass approximation of the ground and lowest excited s...
In this paper, we intend to study the effect of variable mass on the binding energy. In th...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)The effect of spatially dependent scree...
Shallow-donor states in quantum-sized semiconductor heterostructures are studied within the fraction...
ABSTARCT: Theoretical calculations have been used to assess the influence of both an external electr...
908-911A theoretical study has been carried out on the effect of applied stress on the binding ener...
467-470<span style="font-size:14.0pt;line-height: 115%;font-family:" times="" new="" roman";mso-far...
ABSTRACT: Using a variational method the binding energy has been calculated for a shallow donor impu...
AbstractThe donor binding energy of a hydrogenic donor impurity located in the center of a GaAs-AlxG...
Energies of the ground and some excited states of on-centre donors (D-O) in GaAs/Ga1-xAlxAs spherica...
We studied the simultaneous of the magnetic and electric field effects on the binding energy fo...
Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bou...
The ionization energies of a hydrogenic donor in a GaAs- Ga1-xAlxAs cubical quantum dot system are o...
The D°-h impurity-related photoluminescence spectra of confined donors in GaAs-(Ga,Al)As quantum wel...
The donor binding energies in finite GaAs/GaxAl1-As-x quantum wells have been calculated by consider...
A variational calculation within the effective-mass approximation of the ground and lowest excited s...
In this paper, we intend to study the effect of variable mass on the binding energy. In th...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)The effect of spatially dependent scree...
Shallow-donor states in quantum-sized semiconductor heterostructures are studied within the fraction...
ABSTARCT: Theoretical calculations have been used to assess the influence of both an external electr...