ELECTRICAL CONDUCTION IN MOS DEVICES BASED ON SI NANOCRYSTAL-SIOX FILMS

International audienceWe study the electrical properties of rare earth (RE) ions doped silicon rich oxide (Si-rich-SiO2) and layers integrated in metal-oxide-semiconductor device. The aim of such a study consists in fabricating thin layer for future electroluminescent devices doped with RE ions which benefit from the efficient sensitizing effect of Si nanoclusters towards the RE ions. Thus, one of the key parameters is to overcome the insulating characteristic of the SiO2 matrix by incorporating silicon. The technique used for the deposition of such layers is the reactive magnetron co-sputtering of a pure SiO2 and Si targets (with Nd2O3 chips) under a pure argon plasma. Each layer was subsequently submitted to an optimized annealing treatment.Three types of Al/Si-rich-SiO2/p-Si devices are fabricated with different incorporated silicon excess (9, 11, or 16%) of the silicon rich oxide active layer. Static electrical properties of the devices are checked from temperature measurements of I-V characteristics. First results showed a resistive behaviour for each device. In addition, carrier injection into the SiOx matrix in terms of Poole-Frenkel and Fowler-Nordheim mechanisms is analyzed in relation with the silicon excess