Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

International audienceWe report on Sb surfactant growth of InAs nanostructures on GaAs0.51Sb0.49 layers deposited onInP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sbsignificantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layersof InAs, the epitaxial film remains flat and InAs/GaAs0.51Sb0.49 type-II quantum wells are achieved.On (113)B substrates, same growth runs resulted in formation of high density InAs islands.Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energychanges induced by Sb atoms on surface