Strong anti-Stokes (AS) luminescence from the narrow well (NW) is observed in GaAs/AlxGa1-xAs asymmetric double quantum wells when the wide well (WW) is photoexcited. The normalized efficiency of this AS luminescence decreases slightly with temperature and excitation intensity. Furthermore, the normalized efficiency is of the same order of magnitude with the Stokes transfer rate from the NW to the WW. From these results, we propose quantum oscillation of electron and hole wave functions as the mechanism for the AS luminescence
International audienceWe present low-temperature-reflectance experiments, performed on GaAs-Ga1−xAlx...
The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an ana...
The transfer of carriers between two adjacent InxGa1−xAs wells with different thicknesses and separa...
Two-color photoluminescence experiments are performed on the anti-Stokes photoluminescence in GaAs/A...
Anti-Stokes photoluminescence (AS-PL) has been investigated in a step-gradedInx(Al0.17Ga0.83)1-xAs/A...
We show that in an asymmetric, weakly coupled system, an anti-stokes population transfer may occur v...
Photoluminescence spectra of GaAS/AlGaAs asymmetric coupled double quantum wells pin structure were ...
Anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1-xAs/...
The excitation power dependence of nonresonant tunneling rates for photogenerated carriers is studie...
Anomalously large real space charge transfer through thick alloy barriers in GaAs asymmetric double ...
Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga...
We report the first studies of exciton luminescence spectra from asymmetric double quantum wells (DQ...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
International audienceWe present low-temperature-reflectance experiments, performed on GaAs-Ga1−xAlx...
The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an ana...
The transfer of carriers between two adjacent InxGa1−xAs wells with different thicknesses and separa...
Two-color photoluminescence experiments are performed on the anti-Stokes photoluminescence in GaAs/A...
Anti-Stokes photoluminescence (AS-PL) has been investigated in a step-gradedInx(Al0.17Ga0.83)1-xAs/A...
We show that in an asymmetric, weakly coupled system, an anti-stokes population transfer may occur v...
Photoluminescence spectra of GaAS/AlGaAs asymmetric coupled double quantum wells pin structure were ...
Anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1-xAs/...
The excitation power dependence of nonresonant tunneling rates for photogenerated carriers is studie...
Anomalously large real space charge transfer through thick alloy barriers in GaAs asymmetric double ...
Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga...
We report the first studies of exciton luminescence spectra from asymmetric double quantum wells (DQ...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of co...
International audienceWe present low-temperature-reflectance experiments, performed on GaAs-Ga1−xAlx...
The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an ana...
The transfer of carriers between two adjacent InxGa1−xAs wells with different thicknesses and separa...