Hybrid Mode Locking in Semiconductor Lasers: Simulations, Analysis, and Experiments

Hybrid mode locking in a two-section edge-emitting semiconductor laser is studied numerically and analytically using a set of three delay differential equations. In these equations, the external RF signal applied to the saturable-absorber section is modeled by the modulation of the carrier relaxation rate in this section. The estimation of the locking range where the pulse repetition frequency is synchronized with the frequency of the external modulation is performed numerically and the effect of the modulation shape and amplitude on this range is investigated. Asymptotic analysis of the dependence of the locking range width on the laser parameters is carried out in the limit of small-signal modulation. Our numerical simulations indicate that hybrid mode locking can be also achieved in the cases when the frequency of the external modulation is approximately twice and half of the pulse repetition frequency of the free-running passively mode-locked laser $f_P$ . Finally, we provide an experimental demonstration of hybrid mode locking in a 20-GHz quantum-dot laser with the modulation frequency of the reverse bias applied to the absorber section close to $f_P /2$