An experimental study is made of electron tunneling in a resonant-tunneling diode in magnetic fields directed parallel and perpendicular to the planes of the GaAs/Al xGa1-XAs heterostructure layers. In particular, phonon replicas on the current–voltage characteristics of the diode are investigated. In the second current derivatives a fine structure of replicas is found. The transformation of the structure of replicas in a perpendicular magnetic field can be qualitatively understood as a manifestation of the transition of polaron states to magnetopolaronic ones
A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in ...
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/A...
Transition metal dichalcogenide (TMD) semiconductors are two-dimensional materials with great potent...
An experimental study is made of electron tunneling in a resonant-tunneling diode in magnetic fields...
We have constructed a physical model to explain the tunneling current oscillations reported by Hickm...
This thesis examines the electrical transport properties of a series of n-type GaAs/(AIGa)As double ...
Resonant magneto-tunnelling in GaAs/AlGaAs double-barrier heterostructures is studied at low tempera...
Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7As multip...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pesso...
We investigated the cyclotron resonance (CR) on a series of samples containing high-density 2DEG (7...
A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in ...
Nós calculamos o efeito da interação elétron-fonons longitudinais óticos (LO) sobre a energia de tra...
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneli...
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated...
The resonant polaron coupling of high index Landau levels was investigated for quasi-two-dimensional...
A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in ...
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/A...
Transition metal dichalcogenide (TMD) semiconductors are two-dimensional materials with great potent...
An experimental study is made of electron tunneling in a resonant-tunneling diode in magnetic fields...
We have constructed a physical model to explain the tunneling current oscillations reported by Hickm...
This thesis examines the electrical transport properties of a series of n-type GaAs/(AIGa)As double ...
Resonant magneto-tunnelling in GaAs/AlGaAs double-barrier heterostructures is studied at low tempera...
Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7As multip...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pesso...
We investigated the cyclotron resonance (CR) on a series of samples containing high-density 2DEG (7...
A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in ...
Nós calculamos o efeito da interação elétron-fonons longitudinais óticos (LO) sobre a energia de tra...
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneli...
Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated...
The resonant polaron coupling of high index Landau levels was investigated for quasi-two-dimensional...
A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in ...
We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/A...
Transition metal dichalcogenide (TMD) semiconductors are two-dimensional materials with great potent...