Add to ORKGThis paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and bias voltage. The purpose of this paper is to provide an overview of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications
The emergence and deployment of new telecommunication standards (5G then 6G) requires low-cost, high...
chap 13International audienceThis chapter mainly focuses on two different silicon (Si)‐based substra...
Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency charac...
This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous s...
This paper analyses RF substrate losses and non-linearity on Si-based substrates. Through measuremen...
This paper focuses on the comparison of the RF performances of various advanced trap-rich (TR) silic...
For the last five years the semiconductor industry has evolved from a quest to get more logic and co...
In this study, high-resistivity gold-implanted silicon substrates developed for radio frequency (RF)...
In this paper, small- and large-signal performances of passive devices integrated on high-resistivit...
Porous silicon substrate is very promising for next generation wireless communication requiring the ...
[[abstract]]Comprehensive analyses of the effects of temperature (from -50 degrees C to 200 degrees ...
[[abstract]]Comprehensive analyses of the effects of temperature (from -50 degrees C to 200 degrees ...
The interest of 5G in centimeter and millimeter waves relies on large blocks of available spectra an...
HR-SOI technology is currently addressing mobile challenges allowing heterogeneous integration on a ...
The purpose of this master thesis is to design and fabricate Si-based RF substrates. A particular at...
The emergence and deployment of new telecommunication standards (5G then 6G) requires low-cost, high...
chap 13International audienceThis chapter mainly focuses on two different silicon (Si)‐based substra...
Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency charac...
This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous s...
This paper analyses RF substrate losses and non-linearity on Si-based substrates. Through measuremen...
This paper focuses on the comparison of the RF performances of various advanced trap-rich (TR) silic...
For the last five years the semiconductor industry has evolved from a quest to get more logic and co...
In this study, high-resistivity gold-implanted silicon substrates developed for radio frequency (RF)...
In this paper, small- and large-signal performances of passive devices integrated on high-resistivit...
Porous silicon substrate is very promising for next generation wireless communication requiring the ...
[[abstract]]Comprehensive analyses of the effects of temperature (from -50 degrees C to 200 degrees ...
[[abstract]]Comprehensive analyses of the effects of temperature (from -50 degrees C to 200 degrees ...
The interest of 5G in centimeter and millimeter waves relies on large blocks of available spectra an...
HR-SOI technology is currently addressing mobile challenges allowing heterogeneous integration on a ...
The purpose of this master thesis is to design and fabricate Si-based RF substrates. A particular at...
The emergence and deployment of new telecommunication standards (5G then 6G) requires low-cost, high...
chap 13International audienceThis chapter mainly focuses on two different silicon (Si)‐based substra...
Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency charac...