Aim: To investigate the structural changes in the SiO2 (silicon dioxide) layer, which is the sensitive region of the RadFET radiation sensors used in the medical field, and to elaborate the impacts of these modifications on electrical characteristics. Methods: Dry oxidation method was used to grow the SiO2 film on n-type Si (100) and SiO2 MOS capacitors were produced by using DC magnetron sputtering. Irradiation was carried out using a 60Co radioactive source at a dose range of 1 kGy-50 kGy. XRD (X-ray diffraction) results showed that no crystalline structure was formed in the studied dose range. Results: The results obtained from XPS (X-ray photoelectron spectroscopy) showed that Si-Si oxygen deficient bonds were formed in the post-product...
The paper presents the application of a numerical method for the determination of the absorbed dose ...
As advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) technology continues to min...
The use of Al(2)O(3) dielectric in MOS based radiation sensors has been investigated. Their response...
Enhancing the density of defects in the oxide layer is the main factor in improving the sensitivity ...
the effect of gamma irradiation upon Al/HfO2/SiO2/Si MOS structure under different doses of Co-60 is...
The total dose effect of 60Co gamma-irradiation on MOS (metal-oxide-semiconductor) structure of Al/S...
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors w...
Detailed investigation of the effects of Gamma-ray irradiation on the electrical properties such as ...
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistanc...
Field effect transistors with exposed SiO2 gate insulators were used as in situ monitors of the effe...
The response of $n^+p$ silicon strip sensors to electrons from a $^{90}$Sr source was measured using...
The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi...
The response of n(+)p silicon strip sensors to electrons from a Sr-90 source was measured using a mu...
The flatband voltage (VFB) shifts induced by irradiation at 77 K and 300 K are measured at 77 K and ...
Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding...
The paper presents the application of a numerical method for the determination of the absorbed dose ...
As advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) technology continues to min...
The use of Al(2)O(3) dielectric in MOS based radiation sensors has been investigated. Their response...
Enhancing the density of defects in the oxide layer is the main factor in improving the sensitivity ...
the effect of gamma irradiation upon Al/HfO2/SiO2/Si MOS structure under different doses of Co-60 is...
The total dose effect of 60Co gamma-irradiation on MOS (metal-oxide-semiconductor) structure of Al/S...
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors w...
Detailed investigation of the effects of Gamma-ray irradiation on the electrical properties such as ...
Introduction. Electromagnetic or ionizing radiation (IO) has great influence for radiation resistanc...
Field effect transistors with exposed SiO2 gate insulators were used as in situ monitors of the effe...
The response of $n^+p$ silicon strip sensors to electrons from a $^{90}$Sr source was measured using...
The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi...
The response of n(+)p silicon strip sensors to electrons from a Sr-90 source was measured using a mu...
The flatband voltage (VFB) shifts induced by irradiation at 77 K and 300 K are measured at 77 K and ...
Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding...
The paper presents the application of a numerical method for the determination of the absorbed dose ...
As advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) technology continues to min...
The use of Al(2)O(3) dielectric in MOS based radiation sensors has been investigated. Their response...