We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBa2Cu3O7-delta electrodes and a BaTiO3 barrier with thicknesses between 1 nm and 3 nm. Current-voltage measurements at low temperatures show a Josephson coupling for junctions with BaTiO3 barriers of 1 nm and 2 nm. Reducing the barrier thickness bellow a critical thickness seems to suppress the ferroelectric nature of the BaTiO3. The Josephson coupling temperature reduces as the barrier thicknesses increases. The Josephson energies at 12 K are of approximate to 1.5 mV and approximate to 7.5 mV for BaTiO3 barriers of 1 nm and 2 nm, respectively. Fraunhofer patterns are consistent with fluctuations in the critical current due to structural inhomogeneiti...
Bicrystal grain boundary Josephson junctions were fabricated in a stack of two layers of YBa2Cu3Oχ s...
The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are inves...
The Josephson junction is the key active device in the superconductor electronics. Junctions in the ...
We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBa2Cu3O7−...
We report the electrical transport of thin vertically-stacked Josephson tunnel junctions. The device...
The optimization of the superconducting properties in a bottom electrode and the quality of an insul...
A phenomenological approach was used to obtain critical information about the structure and electric...
The optimization of the superconducting properties in a bottom electrode and the quality of an insul...
This thesis describes applications of the ac Josephson effect. Firstly, results are presented from ...
The traditional distinction between tunnel and highly transmissive barriers does not currently hold ...
A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparen...
We report preparation of a novel barrier structure for high Tc superconducting multilayer Josephson ...
The traditional distinction between tunnel and highly transmissive barriers does not currently hold ...
Abstract-Ramp-type junctions connecting the d-wave superconductor YBazCu307.s and the s-wave superco...
Improved high frequency coupling to Josephson tunneling junctions must involve impedance transformat...
Bicrystal grain boundary Josephson junctions were fabricated in a stack of two layers of YBa2Cu3Oχ s...
The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are inves...
The Josephson junction is the key active device in the superconductor electronics. Junctions in the ...
We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBa2Cu3O7−...
We report the electrical transport of thin vertically-stacked Josephson tunnel junctions. The device...
The optimization of the superconducting properties in a bottom electrode and the quality of an insul...
A phenomenological approach was used to obtain critical information about the structure and electric...
The optimization of the superconducting properties in a bottom electrode and the quality of an insul...
This thesis describes applications of the ac Josephson effect. Firstly, results are presented from ...
The traditional distinction between tunnel and highly transmissive barriers does not currently hold ...
A thin interlayer is incorporated in ramp-type Josephson junctions to obtain an increased transparen...
We report preparation of a novel barrier structure for high Tc superconducting multilayer Josephson ...
The traditional distinction between tunnel and highly transmissive barriers does not currently hold ...
Abstract-Ramp-type junctions connecting the d-wave superconductor YBazCu307.s and the s-wave superco...
Improved high frequency coupling to Josephson tunneling junctions must involve impedance transformat...
Bicrystal grain boundary Josephson junctions were fabricated in a stack of two layers of YBa2Cu3Oχ s...
The transport properties of "interface-engineered" edge-type YBa2Cu3O7 Josephson junctions are inves...
The Josephson junction is the key active device in the superconductor electronics. Junctions in the ...