We report a significant Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) at interfaces comprising hexagonal boron nitride (h-BN) and Co. By comparing the behavior of these phenomena at graphene/Co and h-BN/Co interfaces, it is found that the DMI in the latter increases as a function of Co thickness and beyond three monolayers stabilizes with 1 order of magnitude larger values compared to those at graphene/Co, where the DMI shows opposite decreasing behavior. Meanwhile, the PMA for both systems shows similar trends with larger values for graphene/Co and no significant variations for all thickness ranges of Co. Furthermore, using micromagnetic simulations we demonstrate that such significant DMI and PMA valu...
he Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes ...
Using first-principles calculations, we investigate the impact of hydrogenation on the Dzyaloshinski...
A major challenge for future spintronics is to develop suitable spin transport channels with long sp...
The possibility of utilizing the rich spin-dependent properties of graphene has attracted much atten...
The possibility of utilizing the rich spin-dependent properties of graphene has attracted much atten...
Hexagonal boron nitride (h-BN) is used in 2D van der Waals heterostructures as a neutral material, o...
International audienceUsing first-principles calculations, we demonstrate several approaches to cont...
The interfacial Dzyaloshinskii-Moriya interaction (DMI) plays a key role in the formation of exotic ...
Density-functional theory calculations utilizing the generalized Bloch theorem show that interfacial...
Pairing of ?? electronic state structures with functional or metallic atoms makes them possible to e...
The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes...
International audienceThe Dzyaloshinskii-Moriya interaction (DMI) has been recently recognized to pl...
10 pages, 6 figuresInternational audienceA major challenge for future spintronics is to develop suit...
An enhancement of the spin-orbit effects arising on an interface between a ferromagnet (FM) and a he...
The Dzyaloshinskii-Moriya interaction (DMI), which is essential for the stabilization of topological...
he Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes ...
Using first-principles calculations, we investigate the impact of hydrogenation on the Dzyaloshinski...
A major challenge for future spintronics is to develop suitable spin transport channels with long sp...
The possibility of utilizing the rich spin-dependent properties of graphene has attracted much atten...
The possibility of utilizing the rich spin-dependent properties of graphene has attracted much atten...
Hexagonal boron nitride (h-BN) is used in 2D van der Waals heterostructures as a neutral material, o...
International audienceUsing first-principles calculations, we demonstrate several approaches to cont...
The interfacial Dzyaloshinskii-Moriya interaction (DMI) plays a key role in the formation of exotic ...
Density-functional theory calculations utilizing the generalized Bloch theorem show that interfacial...
Pairing of ?? electronic state structures with functional or metallic atoms makes them possible to e...
The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes...
International audienceThe Dzyaloshinskii-Moriya interaction (DMI) has been recently recognized to pl...
10 pages, 6 figuresInternational audienceA major challenge for future spintronics is to develop suit...
An enhancement of the spin-orbit effects arising on an interface between a ferromagnet (FM) and a he...
The Dzyaloshinskii-Moriya interaction (DMI), which is essential for the stabilization of topological...
he Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that stabilizes ...
Using first-principles calculations, we investigate the impact of hydrogenation on the Dzyaloshinski...
A major challenge for future spintronics is to develop suitable spin transport channels with long sp...